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APT43GA90B APT43GA90S
900V High Speed PT IGBT
POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.
(R)
(B)
TO -2 47
D3PAK
C G E
(S)
G
C
E
Single die IGBT
FEATURES
* Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol
Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL
Parameter
Collector Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current Gate-Emitter Voltage 2 Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
1
Ratings
900 78 43 129 30 337 129A @ 900V -55 to 150 300
Unit
V
A
V W
C
Static Characteristics
Symbol
VBR(CES) VCE(on) VGE(th) ICES IGES
TJ = 25C unless otherwise specified
Test Conditions
VGE = 0V, IC = 1.0mA VGE = 15V, IC = 25A VCE = 900V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C
Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
Min
900
Typ
2.5 2.2 4.5
Max
3.1 6 250 1000 100
Unit
V
VGE =VCE , IC = 1mA
A nA
052-6333 Rev C 7 - 2009
VGS = 30V
Thermal and Mechanical Characteristics
Symbol
RJC WT Torque
Characteristic
Junction to Case Thermal Resistance Package Weight Mounting Torque (TO-247 Package), 4-40 or M3 screw
Min
-
Typ
5.9
Max
0.37 -
Unit
C/W g in*lbf
10
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol
Cies Coes Cres Qg2 Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eoff5 td(on tr td(off) tf Eon1 Eoff5
TJ = 25C unless otherwise specified
Test Conditions
Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 450V IC = 25A TJ = 150C, RG = 4.7, VGE = 15V, L= 100uH, VCE = 900V Inductive Switching (25C) VCC = 600V VGE = 15V IC = 25A RG = 4.73 TJ = +25C Inductive Switching (125C) VCC = 600V VGE = 15V IC = 25A RG = 4.73 TJ = +125C 129 12 16 82 57 875 425 12 16 117 129 1660 1000
APT43GA90B_S
Min Typ
2465 227 34 116 18 44 nC pF
Parameter
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy
Max
Unit
A
ns
J
ns
J
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. See Mil-Std-750 Method 3471 3 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 4 Eon1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on switching loss. It is measured by clamping the inductance with a silicon carbide Schottky diode. 5 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6333 Rev C 7 - 2009
Typical Performance Curves
40
V
GE
APT43GA90B_S
300 15V IC, COLLECTOR CURRENT (A) 250 200 150 10V 100 50 0 9V 8V 5V 0 5 10 15 20 25 30 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 25A C T = 25C
J
= 15V
35 IC, COLLECTOR CURRENT (A) 30 25 20
TJ= 55C
13V 12V 11V
TJ= 125C 15 10 5 0 TJ= 25C
TJ= 150C
0 0.5 1 1.5 2 2.5 3 3.5 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
250
12 10 VCE = 180V 8 6 4 2 0 VCE = 450V
IC, COLLECTOR CURRENT (A)
200
150
VCE = 720V
100 TJ= 25C TJ= 125C 0 0 2 TJ= -55C
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5 4 IC = 50A 3 2 1 0
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
6
4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
0
50
100 150 200 250 GATE CHARGE (nC) FIGURE 4, Gate charge
300
6 5 4 IC = 50A 3 2 IC = 12.5A 1 0
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 25A IC = 12.5A
IC = 25A
6
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage 1.10 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.05 1.00 0.95 0.90 0.85 0.80 0.75 -.50 -.25 120 100
50 100 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature
0
IC, DC COLLECTOR CURRENT (A)
80 60 40 20 0 052-6333 Rev C 7 - 2009
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature
25
50
Typical Performance Curves
16 14 VGE = 15V 12 10 8 6 4
VCE = 600V TJ = 25C, or 125C RG = 4.7 L = 100H
APT43GA90B_S
200 td(OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
150
100
VGE =15V,TJ=125C
50
VCE = 600V RG = 4.7 L = 100H
VGE =15V,TJ=25C
0 10 20 30 40 50 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 50 45 40 35 tr, RISE TIME (ns) tr, FALL TIME (ns) 30 25 20 15 10 5 0 10 20 30 40 50 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 3000 2500 2000
TJ = 125C TJ = 25 or 125C,VGE = 15V RG = 4.7, L = 100H, VCE = 600V
0 10 20 30 40 50 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 160 140 120 100 80 60 40 20 0 10 20 30 40 50 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 2400 EOFF, TURN OFF ENERGY LOSS (J) 2000 1600 1200 800 400 0
V = 600V CE V = +15V GE R = 4.7
G
0
RG = 4.7, L = 100H, VCE = 600V
TJ = 125C, VGE = 15V
TJ = 25C, VGE = 15V
0
0
Eon2, TURN ON ENERGY LOSS (J)
V = 600V CE V = +15V GE R = 4.7
G
TJ = 125C
1500 1000 500 0
TJ = 25C
TJ = 25C
0 10 20 30 40 50 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 5000 SWITCHING ENERGY LOSSES (J)
V = 600V CE V = +15V GE T = 125C
J
0 10 20 30 40 50 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 3000 SWITCHING ENERGY LOSSES (J) 2500 2000 1500 1000 500 0
Eoff,25A Eoff,25A Eon2,12.5A Eoff,12.5A
V = 600V CE V = +15V GE R = 4.7
G
Eon2,50A
4000
Eon2,50A
Eon2,50A
3000
Eon2,50A
052-6333 Rev C 7 - 2009
2000
Eoff,25A Eon2,25A
1000
Eoff,12.5A Eon2,12.5A
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
0
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
Typical Performance Curves
10000 Cies IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 200 100
APT43GA90B_S
1000
10
Coes 100
1
Cres 0 200 400 600 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage 10
1 10 100 1000 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0.1
0.40 ZJC, THERMAL IMPEDANCE (C/W) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.5
Note:
D = 0.9
0.7
PDM
0.3
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-2 10-3 0.1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1
052-6333 Rev C 7 - 2009
APT43GA90B_S
10% Gate Voltage td(on) 90% TJ = 125C
APT30DQ120
tr
V CC IC V CE
Collector Current 5% Collector Voltage
5%
10%
A D.U.T.
Switching Energy
Figure 20, Inductive Switching Test Circuit
Figure 21, Turn-on Switching Waveforms and Definitions
Gate Voltage
90% td(off)
TJ = 125C
Collector Voltage tf
10%
0
Collector Current
Switching Energy
Figure 22, Turn-off Switching Waveforms and Definitions
TO-247 Package Outline
Collector (Cathode) (Heat Sink)
D PAK Package Outline
e3 SAC: Tin, Silver, Copper
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 1.04 (.041) 1.15(.045) 13.41 (.528) 13.51(.532)
3
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
052-6333 Rev C 7 - 2009
Gate Collector Emitter
Heat Sink (Collector) and Leads are Plated
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Emitter Collector Gate Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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